By Leo Young (Eds.)
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Additional info for Advances in Microwaves
This type of operation will be considered a special case of a transistor harmonic generator combination, however, and will not be considered further. D. OPERATING PRINCIPLES This section presents a simplified model of the operation of a modern power transistor. The particular model chosen illuminates the essentials of the operation of such a transistor, but more important serves as a base for the development of the power-frequency limitations of transistors. There are, of course, many volumes dedicated to the details of the operation of such transis- B.
25 TUNNEL DIODE DEVICES If The sufficiency conditions for stability have not yet been fully determined. L/\n\2q< l (26) then stability can be achieved with purely resistive load . If loads consisting of a resistance in parallel with a capacitance , or filter-type loads  are used, the limit on L\\r-^C^ can be raised somewhat above unity. Useful graphical methods for determining whether or not a network containing a tunnel diode will be stable have been given by Henoch and Kvaerna  and Bandler [42a].
C. De Loach, Jr. constant" is actually a slowly varying function of sample length for silicon. For other materials its variation may be more or less rapid, depending upon the sensitivity of a and ß to electric fields. For very thin samples the phenomenon of quantum mechanical junction barrier tunneling can cause an even lower limitation on the voltage that can be impressed on a semiconductor of length L. " This concept was first introduced by Zener . These effects must be considered only for extremely thin (high frequency) devices and provide a lower limit for these devices than that expressed by the avalanche multiplication limit.
Advances in Microwaves by Leo Young (Eds.)